LY510ALHTR Ver la hoja de datos (PDF) - STMicroelectronics

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LY510ALHTR

MEMS motion sensor: high performance ±100 °/s analog yaw-rate gyroscope

STMicroelectronics 

Mechanical and electrical specifications

LY510ALH

2.2

Electrical characteristics

Table 4. Electrical characteristics @ Vdd =3 V, T=25 °C unless otherwise noted(1)

Symbol

Parameter

Test condition

Min.

Typ.(2)

Max.

Unit

Vdd Supply voltage

2.7

3

3.6

V

Idd

Supply current

PD pin connected to GND

5

5.5

mA

IddPdn

Supply current in

power-down mode

PD pin connected to Vdd

1

5

µA

VST

Self-test input

Logic 0 level

Logic 1 level

0

0.8*Vdd

0.2*Vdd

V

Vdd

VPD Power-down input

Logic 0 level

Logic 1 level

0

0.8*Vdd

0.2*Vdd

V

Vdd

Top

Operating temperature

range

-40

+85

°C

1. The product is factory calibrated at 3 V

2. Typical specifications are not guaranteed

2.3

Absolute maximum ratings

Stresses above those listed as “Absolute maximum ratings” may cause permanent damage

to the device. This is a stress rating only and functional operation of the device under these

conditions is not implied. Exposure to maximum rating conditions for extended periods may

affect device reliability.

Table 5.

Symbol

Absolute maximum ratings

Ratings

Vdd Supply voltage

Vin Input voltage on any control pin (PD, ST)

A Acceleration

TSTG Storage temperature range

ESD Electrostatic discharge protection

Maximum value

Unit

-0.3 to 6

V

-0.3 to Vdd +0.3

V

3000 g for 0.5 ms

10000 g for 0.1 ms

-40 to +125

°C

2 (HBM)

kV

This is a mechanical shock sensitive device, improper handling can cause permanent

damage to the part

This is an ESD sensitive device, improper handling can cause permanent damage to

the part

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Doc ID 15800 Rev 2

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