MM118-12 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
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Lista de partido
MM118-12 Datasheet PDF : 3 Pages
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INDUCTIVE LOAD, Tj= 125°C (2,3)
Turn-on Delay Time
td(on)
VGE = 15 V, L= 100 µH note 2, 3
for MM118-06: VCE = 480 V,
Rise Time
IC = 30 A, RG = 4.7 Ω
tri
for MM118-12: VCE= 600 V,
On Energy
IC= 25 A, RG = 47 Ω
Turn-off Delay Time
Eon
Fall Time
td(off)
Off Energy
tfi
Eoff
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Qg
VGE = 15 V,
for MM118-06: VCE = 300V, IC= 30 A
for MM118-12: VCE= 600 V, IC= 25 A
Qge
Qgc
Antiparallel diode forward voltage (1)
VF
IE= 15 A
TJ = 25 °C
IE= 30 A
TJ = 25 °C
IE= 50 A
TJ = 25 °C
IE= 15 A
TJ = 150 °C
IE= 10 A
TJ = 25 °C
IE= 10 A
TJ = 100 °C
Antiparallel diode reverse recovery time
trr
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C
Antiparallel diode reverse recovery charge
Qrr
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C
Antiparallel diode peak recovery current
IRM
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06
MM118-06
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
25
tbd
ns
60
tbd
ns
95
tbd
ns
35
tbd
ns
130
tbd
ns
90
tbd
ns
1
-
mJ
4.2
-
mJ
10
-
mJ
250
tbd
ns
540
1000
ns
420
tbd
ns
260
tbd
ns
600
1500
ns
45
tbd
ns
4
-
mJ
12
-
mJ
4.2
-
mJ
125
150
nC
110
150
160
tbd
23
35
34
45
20
tbd
50
75
47
63
75
tbd
-
1.5
V
1.7
-
1.9
-
-
1.3
2.4
3
2
-
-
100
ns
140
-
-
tbd
60
-
160
nC
320
tbd
800
3
A
4.2
tbd
22
Notes
(1) Pulse test, t ≤ 300 µs, duty cycle δ≤ 2%
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi does not manufacture the igbt die; contact Microsemi for details.
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