TLP421 Ver la hoja de datos (PDF) - Toshiba

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TLP421

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

• Option(D4)type

TÜV approved: DIN EN 60747-5-2

Approved no. R9950202

Maximum operating insulation voltage: 890VPK

Maximum permissible overvoltage: 8000VPK

(Note): When a EN 60747-5-2 approved type is needed,

please designate the “Option(D4)”

Making the VDE application: DIN EN 60747-5-2

• Construction mechanical rating

7.62mm Pitch 10.16mm Pitch

Typical Type TLPxxxF Type

Creepage distance

7.0mm(min)

8.0mm(min)

Clearance

7.0mm(min)

8.0mm(min)

Insulation thickness

0.4mm(min)

0.4mm(min)

TLP421

Current Transfer Ratio

Type

TLP421

Classi−

fication

(*1)

(None)

Rank Y

Rank GR

Rank BL

Rank GB

Current Transfer Ratio (%)

(IC / IF)

IF = 5mA, VCE = 5V, Ta = 25°C

Min

Max

50

600

50

150

100

300

200

600

100

600

Marking Of Classification

Blank, Y, Y+, G, G+, B, B+, GB

Y, Y+

G, G+

B, B+

G, G+, B, B+, GB

(*1): Ex. rank GB: TLP421 (GB)

(Note): Application type name for certification test, please use standard product type name, i. e.

TLP421 (GB): TLP421

2

2007-10-01

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