G4BC20KD Ver la hoja de datos (PDF) - International Rectifier

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G4BC20KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC20KD

 3.0 RG = 5O0hΩm

T J = 150° C

VCC = 480V

VGE = 15V

2.0

1.0

 100

VGE = 20V

T J = 125 o C

10

0.0

0

4

8

12

16

I C, Collector-to-emitter Current (A)

SAFE OPERATING AREA

1

20

1

10

100

1000

VCE, Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

Fig. 12 - Turn-Off SOA

10

TJ = 15 0°C

TJ = 12 5°C

TJ = 2 5°C

1

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V FM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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