IKW40N120T2(2008) Ver la hoja de datos (PDF) - Infineon Technologies

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IKW40N120T2
(Rev.:2008)

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

IKW40N120T2

TrenchStop® 2nd Generation Series

1000ns

td(off)

100ns tf

td(on)

10ns tr

1ns

20A

40A

60A

Figure 9.

IC, COLLECTOR CURRENT

Typical switching times as a

function of collector current

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, RG=12Ω,

Dynamic test circuit in Figure E)

1000 ns

td(off)

tf

100 ns

td(on)

10 ns tr

5Ω

15Ω

25Ω

35Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=40A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=600V, VGE=0/15V,

IC=40A, RG=12Ω,

Dynamic test circuit in Figure E)

6.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

max.

typ.

min.

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as a

function of junction temperature

(IC = 1.5mA)

Power Semiconductors

7

Rev. 2.2 Sep 08

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