BLF245 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BLF245 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF245
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VDS
VGS
ID
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
VGS = 0
VDS = 0
Tmb ≤ 25 °C
MIN.
−
−
−
−
−65
−
MAX. UNIT
65
V
±20 V
6
A
68
W
150 °C
200 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 68 W
thermal resistance from mounting base to heatsink Tmb = 25 °C; Ptot = 68 W
VALUE
2.6
0.3
UNIT
K/W
K/W
10
handbook, halfpage
ID
(A)
(1)
1
MRA921
(2)
10−1
1
10
102
VDS (V)
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
handboo1k,0h0alfpage
Ptot
(W)
80
(2)
60
(1)
40
20
0
0
40
80
MGP167
120
160
Th (°C)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.3 Power derating curves.
2003 Sep 02
3
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