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Número de pieza

componentes Descripción

Lista de partido

K9F2G08B0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Preliminary

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.8V(2.7V device), 2V(3.3V device). WP pin provides hardware protection and is

recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 100µs is required before internal cir-

cuit gets ready for any command sequences as shown in Figure 20. The two step command sequence for program/erase provides

additional software protection.

Figure 20. AC Waveforms for Power Transition

~ 2.3V

VCC

High

~ 2.3V

WP

WE

Don’t care

Ready/Busy

5 ms max

100µs

Operation

Invalid

Note :During the initialization, the device consumes a maximum current of 30mA (ICC1)

Don’t care

Samsung Confidential

41

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