IRFRC20TR Ver la hoja de datos (PDF) - Vishay Semiconductors
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IRFRC20TR Datasheet PDF : 8 Pages
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IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
4.4
18
3.0
8.9
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFRC20/SiHFRC20)
• Straight Lead (IRFUC20/SiHFUC20)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFUC/SiHFUC series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFRC20PbF
SiHFRC20-E3
SnPb
IRFRC20
SiHFRC20
Note
a. See device orientation.
DPAK (TO-252)
IRFRC20TRLPbFa
SiHFRC20TL-E3a
IRFRC20TRLa
SiHFRC20TLa
DPAK (TO-252)
IRFRC20TRPbFa
SiHFRC20T-E3a
IRFRC20TRa
SiHFRC20Ta
DPAK (TO-252)
IRFRC20TRRPbFa
SiHFRC20TR-E3a
IRFRC20TRRa
SiHFRC20TRa
IPAK (TO-251)
IRFUC20PbF
SiHFUC20-E3
IRFUC20
SiHFUC20
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 206 mH, RG = 25 Ω, IAS = 2.0 A (see fig. 12).
c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
600
± 20
2.0
1.3
8.0
0.33
0.020
450
2.0
4.2
42
2.5
3.0
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91285
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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