JANTXV2N6849 Ver la hoja de datos (PDF) - International Rectifier
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JANTXV2N6849 Datasheet PDF : 7 Pages
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PD-90550E
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF9130 -100V 0.30Ω
ID
-6.5A
IRFF9130
JANTX2N6849
JANTXV2N6849
JANS2N6849
REF:MIL-PRF-19500/564
100V, P-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1
-25
25
0.20
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
92
Avalanche Current
-6.5
Repetitive Avalanche Energy
2.5
Peak Diode Recovery dv/dt
-5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
0.98 (typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
07/28/15
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