STPS30150CT(2003) Ver la hoja de datos (PDF) - STMicroelectronics

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STPS30150CT
(Rev.:2003)

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STMicroelectronics 

®

STPS30150CT/CW/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)

VRRM

Tj

VF (max)

2 x 15 A

150 V

175°C

0.75 V

FEATURES AND BENEFITS

s HIGH JUNCTION TEMPERATURE CAPABILITY

s GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

s LOW LEAKAGE CURRENT

s INSULATED PACKAGE: TO-220FPAB

Insulating voltage: 2000V DC

Capacitance: 45pF

s AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap schottky rectifier designed for

high frequency Switched Mode Power

Supplies.

A1

K

A2

A2

K

A1

TO-220FPAB

STPS30150CFP

A2

K

A1

TO-247

STPS30150CW

A2

A1K

TO-220AB

STPS30150CT

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

VRRM Repetitive peak reverse voltage

IF(RMS) RMS forward current

IF(AV) Average forward current TO-220FPAB Tc = 110°C per diode

δ = 0.5

TO-220AB Tc = 155°C per device

TO-247

IFSM Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM Repetitive peak avalanche power

tp = 1µs Tj = 25°C

Tstg Storage temperature range

Tj Maximum operating junction temperature *

dV/dt Critical rate of rise of reverse voltage

Value

Unit

150

V

30

A

15

A

30

220

10500

- 65 to + 175

175

10000

A

W

°C

°C

V/µs

* : dPtot <

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

July 2003 - Ed: 6C

1/6

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