STPS30150C(2010) Ver la hoja de datos (PDF) - STMicroelectronics

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STPS30150C
(Rev.:2010)

High voltage power Schottky rectifier

STMicroelectronics 

STPS30150C

Characteristics

Figure 11. Forward voltage drop versus

Figure 12. Thermal resistance junction to

forward current (maximum values,

per diode)

ambient versus copper surface

under tab for D2PAK

IFM(A)

100.0

Tj=125°C

(maximum values)

10.0

1.0

Tj=125°C

(typical values)

Tj=25°C

(maximum values)

Rth(j-a)(°C/W)

80

70

60

50

40

30

20

Epoxy printed circuit board FR4,

copper thickness: 35µm

VFM(V)

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

0

S(Cu)(cm²)

5

10

15

20

25

30

35

40

Doc ID 7757 Rev 8

5/11

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