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VDS4616A4A-6

Synchronous DRAM 512K x 16 Bit x 2 Banks

A-Data Technology 

V-Data

Synchronous DRAM

VDS4616A4A

512K x 16 Bit x 2 Banks

General Description

The VDS4616A4A are two-bank Synchronous

DRAMs organized as 524,288 words x 16 bits x 2

banks,

Synchronous design allows precise cycle control

with the use of system clock I/O transactions are

possible on every clock cycle.

Range of operating frequencies, programmable

burst length and programmable latencies allow the

same device to be useful for a variety of high

bandwidth high performance memory system

applications

Features

•Single 3.3V +/- 0.3V power supply

•MRS Cycle with address key programs

-CAS Latency (2 & 3)

-Burst Length (1,2,4,8, & full page)

-Burst Type (sequential & Interleave)

•2 banks operation

•All inputs are sampled at the positive edge of

the system clock

•Burst Read single write operation

•Auto & Self refresh

•4096 refresh cycle

•DQM for masking

•Package:50-pins 400 mil TSOP-Type II

Ordering Information.

Part No.

VDS4616A4A-5

VDS4616A4A -6

VDS4616A4A -7

Pin Assignment

Frequency

200Mhz

166Mhz

143Mhz

Interface

LVTTL

LVTTL

LVTTL

Package

400mil 50pin TSOPII

400mil 50pin TSOPII

400mil 50pin TSOPII

VDD

1

DQ0

2

DQ1

3

VSSQ

4

DQ2

5

DQ3

6

VDDQ

7

DQ4

8

DQ5

9

V SSQ

10

DQ6

11

DQ7

12

VDDQ

13

LDQM

14

/WE

15

/CAS

16

/RAS

17

/CS

18

(BS)A11

19

A10

20

A0

21

A1

22

A2

23

A3

24

VDD

25

50

Vss

49

DQ15

48

DQ14

47

VssQ

46

DQ13

45

DQ12

44

VDD Q

43

DQ11

42

DQ10

41

VSSQ

40

DQ9

39

DQ8

38

VDDQ

37

NC

36

UDQM

35

CLK

34

CKE

33

NC

32

A9

31

A8

30

A7

29

A6

28

A5

27

A4

26

VSS

50-pin plastic TSOP II 400 mil

Rev 1 December, 2001

1

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