1004DCR100 Ver la hoja de datos (PDF) - Naina Semiconductor ltd.

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1004DCR100

Phase Control Thyristors (Capsule Type), 1000A

Naina Semiconductor ltd. 

Naina Semiconductor Ltd.

Blocking Parameters (TJ = 25oC, unless otherwise specified)

Parameters

Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated

VDRM

Maxmimum peak reverse & off-state leakage current @ TJ = TJ max, rated

VDRM/VRRM applied

Symbol

dV/dt

IRRM, IDRM

Triggering Parameters (TJ = 25oC, unless otherwise specified)

Parameters

DC gate current to trigger

DC gate voltage to trigger

Symbol

IGT

VGT

Thermal and Mechanical Specifications (TJ = 25oC, unless otherwise specified)

Parameters

Symbol

Maximum operating junction temperature range

TJ

Maximum storage temperature range

TStg

Maximum thermal resistance, junction to case

Rth(JC)

Mounting torque

F

Approximate weight

WT

Package Outline

1004DCR

Values

500

60

Units

V/µs

mA

Values

200

3.0

Values

- 40 to +125

- 40 to +125

0.031

16 … 22

490

Units

mA

V

Units

oC

oC

oC/W

kN

g

ALL DIMENSIONS IN MM

2

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sales@nainasemi.com • www.nainasemi.com

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