A1205 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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A1205

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A

ICBO

Collector cut-off current

VCB=-70V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-0.5V

fT

Transition frequency

IE=3A ; VCE=-12V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-5A;RL=4Ω

IB1=-IB2=-0.12A

VCC=-20V

Product Specification

2SA1205

MIN TYP. MAX UNIT

-50

V

-0.5

V

-0.1 mA

-0.1 mA

40

20

MHz

0.60

μs

0.50

μs

0.25

μs

2

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