74HC00 Ver la hoja de datos (PDF) - Philips Electronics
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74HC00 Datasheet PDF : 17 Pages
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Philips Semiconductors
Quad 2-input NAND gate
Product specification
74HC00; 74HCT00
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VO
Tamb
supply voltage
input voltage
output voltage
operating ambient
temperature
tr, tf
input rise and fall times
CONDITIONS
74HC00
74HCT00
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
VCC 0
−
VCC V
0
−
VCC 0
−
VCC V
see DC and AC −40 +25 +125 −40 +25 +125 °C
characteristics per
device
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
−
−
1000 −
−
−
ns
−
6.0 500 −
6.0 500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
supply voltage
IIK
input diode current
IOK
output diode current
IO
output source or sink
current
ICC, IGND
Tstg
Ptot
VCC or GND current
storage temperature
power dissipation
CONDITIONS
VI < −0.5 V or VI > VCC + 0.5 V
VO < −0.5 V or VO > VCC + 0.5 V
−0.5 V < VO < VCC + 0.5 V
Tamb = −40 to +125 °C; note 1
MIN.
−0.5
−
−
−
MAX.
+7.0
±20
±20
±25
UNIT
V
mA
mA
mA
−
±50
mA
−65
+150
°C
−
500
mW
Note
1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K.
For SO14 packages: above 70 °C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K.
2003 Jun 30
5
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