AFM04P3-000 Ver la hoja de datos (PDF) - Alpha Industries
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AFM04P3-000 Datasheet PDF : 2 Pages
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Low Noise/Medium Power
GaAs MESFET Chip
Features
s 21 dBm Output Power @ 18 GHz
s High Associated Gain, 9 dB @ 18 GHz
s High Power Added Efficiency, 25%
s Broadband Operation, DC–26 GHz
s 0.25 µm Ti/Pd/Au Gates
s Passivated Surface
Description
The AFM04P3-000 is a high performance power GaAs
MESFET chip having a gate length of 0.25 µm and a total
gate periphery of 400 µm. The device has excellent gain
and power performance through 26 GHz, making it
suitable for a wide range of commercial and military
applications in oscillator and amplifier circuits. The device
employs Ti/Pd/Au gate metallization and surface
passivation to ensure a rugged, reliable part.
Chip Layout
AFM04P3-000
Absolute Maximum Ratings
Characteristic
Drain to Source Voltage (VDS)
Gate to Source Voltage (VGS)
Drain Current (IDS)
Gate Current (IGS)
Total Power Dissipation (PT)
Storage Temperature (TST)
Channel Temperature (TCH)
Value
6V
-4 V
IDSS
1 mA
700 mW
-65 to +150°C
175°C
Electrical Specifications at 25°C
Parameter
Saturated Drain Current (IDSS)
Transconductance (gm)
Pinch-off Voltage (VP)
Gate to Drain
Breakdown Voltage (Vbgd)
Noise Figure (NF)
Associated Gain (GA)
Output Power at 1 dB
Compression (P1 dB)
Gain at 1 dB Compression (G1 dB)
Power Added Efficiency (ηadd)
Thermal Resistance (ΘJC)
Test Conditions
VDS = 2 V, VGS = 0 V
VDS = 5 V, IDS = 1 mA
IGD = -400 µA
VDS = 2 V, IDS = 25 mA, F = 4 GHz
VDS = 5 V, IDS = 70 mA, F = 18 GHz
TBASE = 25°C
Min.
90.0
60.0
1.0
8.0
Typ.
140.0
80.0
3.0
12.0
0.6
13.8
21.0
9.0
25.0
Max.
190.0
5.0
250.0
Unit
mA
mS
-V
-V
dB
dB
dBm
dB
%
°C/W
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 6/99A
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