30G120ASW Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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30G120ASW Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP30G120ASW
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant
G
C
E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
IF@TC=100℃
IFM
PD@TC=25℃
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current1
Diode Continunous Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
TL
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
VCES
IC
G
Rating
1200
+30
60
30
120
6
40
208
-55 to 150
-55 to 150
300
1200V
30A
C
E
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c(IGBT) Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
0.6
2
40
Units
℃/W
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
Gate-to-Emitter Leakage Current
VGE=+30V, VCE=0V
-
- +500 nA
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
-
-
1 mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
- 2.9 3.6 V
VGE=15V, IC=60A
- 3.7 -
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
3
-
7
V
Qg
Total Gate Charge
IC=30A
-
63 100 nC
Qge
Gate-Emitter Charge
VCC=500V
-
12
-
nC
Qgc
Gate-Collector Charge
VGE=15V
-
32
-
nC
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
VCC=600V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
-
40
-
ns
-
45
-
ns
- 125 - ns
- 430 860 ns
- 1.3 - mJ
Eoff
Turn-Off Switching Loss
- 3.1 - mJ
Cies
Input Capacitance
VGE=0V
- 1400 2240 pF
Coes
Output Capacitance
VCE=30V
- 120 - pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
-
15
-
pF
Electrical Characteristics of Diode@Tj=25℃(unless otherwise specified)
VF
Forward Voltage
VF
Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF=6A
IF=20A
IF=10A
di/dt = 100 A/µs
- 2.6 3
V
-
-
4
V
-
54
-
ns
- 138 - nC
Data and specifications subject to change without notice
1
201107182
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