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BC846

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

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BC846

BC848

BC850

BC847

BC849

ELECTRICAL CHARACTERISTICS (Continued)

PARAMETER

SYMBOL

BC846 BC847 BC848 BC849 BC850 UNIT CONDITIONS.

Dynamic Group VI hie

Min 0.4 0.4 0.4

––

kΩ

Characteristics

Typ 1.2 1.2 1.2

––

kΩ

Max 2.2 2.2 2.2

––

kΩ

Group A

Min 1.6 1.6 1.6

––

kΩ

Typ 2.7 2.7 2.7

––

kΩ

Group B

Max 4.5 4.5 4.5

––

kΩ

Min

3.2

kΩ

Typ

4.5

kΩ

Group C

Max

8.5

kΩ

Min – – 6 6 6 kΩ

Typ – – 8.7 8.7 8.7 kΩ

Max –

–

15 15 15 kΩ

Group VI hre

Group A

Typ 2.5 2.5 2.5 –

Typ 1.5 1.5 1.5 –

–

–

x10-4

x10-4

Group B

Typ 2

2

2

2

2

x10-4

Group C

Typ –

–

3

3

3

x10-4

Group VI hfe

Min 75 75 75 –

–

Typ 110 110 110 – –

Max 150 150 150 – –

Group A

Min 125 125 125 – –

Typ 220 220 220 – –

Max 260 260 260 – –

Group B

Min

240

Typ

330

Group C

Max

500

VCE=5V

Ic=2mA

Min –

Typ –

Max –

450 450 450 450

600 600 600 600

900 900 900 900

Group VI hoe Typ 20 20 20 –

–

µs

Max 40 40 40 – – µs

Group A

Typ 18 18 18 – – µs

Max 30 30 30 – – µs

Group B

Typ 30

µs

Max 60

µs

Group C

Typ – – 60 60 60 µs

Max – – 110 110 110 µs

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