GS88219AB-250 Ver la hoja de datos (PDF) - Giga Semiconductor

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GS88219AB-250

512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

Giga Semiconductor 

Simplified State Diagram

Preliminary

GS88219/37AB-250/225/200/166/150/133

X

Deselect

W

R

W

R

X

First Write R

CW

CR

First Read

X

CR

W

R

X Burst Write

CR

CW

R

Burst Read

X

CR

Notes:

1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and

that ADSP is tied high and ADSC is tied low.

3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and

assumes ADSP is tied high and ADV is tied low.

Rev: 1.00 3/2002

11/36

© 2002, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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