BS62UV256JC Ver la hoja de datos (PDF) - Brilliance Semiconductor
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BS62UV256JC Datasheet PDF : 11 Pages
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BSI
BS62UV256
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
MIN. TYP. (1) MAX.
-0.5
--
0.6
0.8
1.4
2.0
--
Vcc+0.2
--
--
1
IOL
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
1
VOL
Output Low Voltage
Vcc = Max, IOL = 1mA
Vcc=2.0V
Vcc=3.0V
--
--
0.4
VOH
Output High Voltage
Vcc = Min, IOH = -0.5mA
Vcc=2.0V
1.6
Vcc=3.0V
2.4
--
--
ICC
Operating Power Supply
Current
CE = VIL, IDQ = 0mA, F = Fmax(3)
Vcc=2.0V
Vcc=3.0V
--
--
--
--
10
20
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=2.0V
--
--
0.5
Vcc=3.0V
--
--
1.0
ICCSB1
Standby Current-CMOS
CE Њ Vcc-0.2V,
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
Vcc=2.0V
Vcc=3.0V
--
--
0.005
0.01
0.1
0.2
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
UNITS
V
V
uA
uA
V
V
mA
mA
uA
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
SYMBOL
PARAMETER
VDR
Vcc for Data Retention
ICCDR
tCDR
tR
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
TEST CONDITIONS
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
CE Њ Vcc -0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE Controlled )
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
MIN. TYP. (1) MAX.
1.5
--
--
--
0.005 0.1
0
--
--
TRC (2)
--
--
UNITS
V
uA
ns
ns
Vcc
tR
VIH
R0201-BS62UV256
3
Revision 2.2
April 2001
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