CY7C1041BV33L-12VC Ver la hoja de datos (PDF) - Cypress Semiconductor

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CY7C1041BV33L-12VC

256K x 16 Static RAM

Cypress Semiconductor 

CY7C1041BV33

Electrical Characteristics Over the Operating Range (continued)

Parameter

VOH

VOL

VIH

Description

Output HIGH Voltage

Output LOW Voltage

Input HIGH Voltage

VIL

Input LOW Voltage[1]

IIX

Input Load Current

IOZ

Output Leakage

Current

ICC

VCC Operating

Supply Current

ISB1

Automatic CE

Power-Down Current

—TTL Inputs

ISB2

Automatic CE

Power-Down Current

—CMOS Inputs

Test Conditions

-17

-20

-25

Min. Max. Min. Max. Min. Max. Unit

VCC = Min., IOH = –4.0 mA

VCC = Min., IOL = 8.0 mA

2.4

2.4

2.4

V

0.4

0.4

0.4 V

2.2 VCC + 2.2 VCC + 2.2 VCC + V

0.5

0.5

0.5

–0.5 0.8 –0.5 0.8 –0.5 0.8 V

GND < VI < VCC

GND < VOUT < VCC,

Output Disabled

–1 +1 –1 +1 –1 +1 µA

–1 +1 –1 +1 –1 +1 µA

VCC = Max.,

f = fMAX = 1/tRC

Comm’l

Ind’l

160

150

180

170

130 mA

150

Max. VCC, CE > VIH

VIN > VIH or

VIN < VIL, f = fMAX

40

40

Max. VCC,

Com’l/Ind’l

8

8

CE > VCC – 0.3V,

VIN > VCC – 0.3V,

Com’l L

0.5

0.5

or VIN < 0.3V, f=0

40 mA

8 mA

0.5 mA

Capacitance[3]

Parameter

Description

Test Conditions

CIN

Input Capacitance

TA = 25°C, f = 1 MHz, VCC = 3.3V

COUT

I/O Capacitance

Note:

3. Tested initially and after any design or process changes that may affect these parameters.

Max.

8

8

Unit

pF

pF

AC Test Loads and Waveforms

3.3V

R1 317Ω

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

(a)

THÉVENIN EQUIVALENT

OUTPUT

167Ω

R2

(b)

351Ω

3.3V

1.73V

GND

Rise time: 1 V/ns

ALL INPUT PULSES

90%

10%

90%

10%

Fall time:

1 V/ns

Document #: 38-05168 Rev. **

Page 3 of 11

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