datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga

DIM100PHM33-F000 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Lista de partido
DIM100PHM33-F000
Dynex
Dynex Semiconductor Dynex
DIM100PHM33-F000 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Replaces DS5764-1.2
DIM100PHM33-F000
Half Bridge IGBT Module
DS5764-2 October 2011 (LN28815)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated AlSiC Base with AlN Substrates
Lead Free Construction
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK) (max)
3300V
2.8V
100A
200A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM100PHM33-F000 is a half bridge 3300V soft
punch through, n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) chopper
module configured with the lower arm of the bridge
controlled.. The IGBT has a wide reverse bias safe
operating area (RBSOA). This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM100PHM33-F000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
1/8
www.dynexsemi.com

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]