GP1A73AJ000F Ver la hoja de datos (PDF) - Sharp Electronics
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GP1A73AJ000F
Sharp Electronics
GP1A73AJ000F Datasheet PDF : 10 Pages
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GP1A73AJ000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) In order to stabilize power supply line, connect aby-pass capacitor of more than 0.01μF between VCC and
GND near the device.
3) When the sensor is connected with long wire, noise might be on the signal from the sensor while it is
going through the wire. To avoid this problem, please evaluate the sensor under actual usage condition to
make sure that the system works fine.
4) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1) [Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit]
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (μs)
Photodiode
Silicon (Si)
900
400 to 1 200
10
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
• Material
Case
Black polycarbonate resin
(UL94V-2)
Lead frame
42Alloys
(There is no plating)
Maximum light emitting
wavelength (nm)
940
I/O Frequency (MHz)
0.3
Connector terminal finish
Sn plating (PN : 292133-3)
SnCu plating (PN : GH4A003P000ZA)
• Others
Laser generator is not used.
Sheet No.: D3-A04601EN
6
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