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ST3237ECDR(2005) Ver la hoja de datos (PDF) - STMicroelectronics

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ST3237ECDR Datasheet PDF : 15 Pages
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ST3237E
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj = 25°C)
Figure 3: LOW Level Receiver Output Current
Figure 4: HIGH Level Receiver Output Current
Figure 5: ESD Protection
Note: The High ESD protected pins are the I/O RS232 line, transmitter out and receiver in. The other pins guarantee ± 2KV HBM ESD pro-
tection versus ground by means of diodes.
APPLICATION NOTE
This application note describes the procedure for
determining the susceptibility and the test method
to verify ST ESD advanced protection on RS-232
or RS485 I/O device.
Static electricity is defined as an electrical charge
caused by an imbalance of electrons on the
surface of a material. This imbalance of electrons
produces an electric field that can be measured
and that can influence other objects at a distance.
Electrostatic discharge is defined as the transfer
of charge between bodies at different electrical
potentials. Electrostatic discharge (ESD) can
change the electrical characteristics of a
semiconductor device, degrading or destroying it.
Any input or output port (I/O) allows access
communication with other pieces of equipment by
external connectors. These connectors are
directly linked by the I/O pins of RS-232 or RS485
interface. ST provides the E-series by advanced
high ESD protection structure. The protection
functionality is tested in two different conditions:
The first model is used to simulate the HUMAN
BODY MODEL (HBM) event. A similar discharge
can occur from a charged conductive object, such
as a metallic tool or fixture. The model used to
characterize this event is known as the Machine
Model. A Human Body Model circuit and
waveform is presented in Figures below.
7/15

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