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LTC1150C(RevB) Ver la hoja de datos (PDF) - Linear Technology

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LTC1150C Datasheet PDF : 16 Pages
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LTC1150
ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, Pin 1 = Open, unless otherwise noted.
PARAMETER
Slew Rate
Gain Bandwidth Product
Supply Current
Internal Sampling Frequency
CONDITIONS
RL = 10k, CL = 50pF
No Load
No Load, Pin 1 = V
No Load
LTC1150M
MIN TYP MAX
3
2.5
0.8 1.5
0.2
2
550
LTC1150C
MIN TYP MAX
3
2.5
0.8 1.5
0.2
2
550
UNITS
V/µs
MHz
mA
Hz
The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = 5V, Pin 1 = Open, unless otherwise noted.
PARAMETER
CONDITIONS
Input Offset Voltage
(Note 3)
Average Input Offset Drift
(Note 3)
Long Term Offset Voltage Drift
Input Offset Current
Input Bias Current
Input Noise Voltage
Input Noise Current
RS = 100, 0.1Hz to 10Hz, TC2
RS = 100, 0.1Hz to 1Hz, TC2
f = 10Hz (Note 4)
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Large-Signal Voltage Gain
Maximum Output Voltage Swing
Slew Rate
Gain Bandwidth Product
VCM = 0V to 2.7V
VS = ±2.375V to ±16V
RL = 10k, VOUT = 0.3V to 4.5V
RL = 10k
RL = 100k
RL = 10k, CL = 50pF
Supply Current
No Load
Internal Sampling Frequency
LTC1150M
MIN TYP MAX
±0.5 ±10
±0.01 ±0.05
50
±10 ±60
±5 ±30
2.0
0.7
1.3
106 130
120 145
115 180
0.15 to 4.85
0.02 to 4.97
1.5
1.8
0.4 1
1.5
300
LTC1150C
MIN TYP MAX UNITS
±0.05 ±10
µV
±0.01 ±0.05 µV/°C
50
µV/mo
±10 ±60
pA
±5 ±30
pA
2.0
µVP-P
0.7
1.3
fA/Hz
106 130
dB
120 145
dB
115 180
dB
0.15 to 4.85
V
0.02 to 4.97
1.5
V/µs
1.8
MHz
0.4
1
mA
1.5
300
Hz
Note 1: Absolute Maximum Ratings are those values beyond which life of
the device may be impaired.
Note 2: Connecting any terminal to voltages greater than V+ or less than
Vmay cause destructive latch-up. It is recommended that no sources
operating from external supplies be applied prior to power-up of the
LTC1150.
Note 3: These parameters are guaranteed by design. Thermocouple effects
preclude measurement of these voltage levels in high-speed automatic test
systems. VOS is measured to a limit determined by test equipment
capability.
Note 4: Current Noise is calculated from the formula:
IN = (2q • Ib)
where q = 1.6 • 10–19 Coulomb.
1150fb
3

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