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IN9270N

DTMF RECEIVER High-Performance Silicon-Gate CMOS

Integral Corp. 

IN9270

DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND, VCC = 5 V ± 5%,

TA = -10 to +70°C)

Guaranteed Limits

Symbol

Parameter

Test Conditions

Min Typ Max

Unit

VIH Minimum High-Level

VOUT =5 V

3.6

V

Input Voltage

VIL Maximum Low-Level

Input Voltage

VOUT =5 V

1.4

V

VOH Minimum High-Level

No Load

4.97

V

Output Voltage

VOL Maximum Low-Level

Output Voltage

No Load

0.05

V

IIN

Maximum Input Leakage VIN=VCC or GND

Current

±0.1

µA

ISO

Maximum Pull Up

(Source) Current

OE = 0 V

24

µA

IOL

Minimum Output-Low

VOUT =0.4 V

0.8

mA

(Sink) Current

IOH

Minimum Output-High VOUT =4.6 V

0.35

mA

(Source) Current

ICC

Maximum Quiescent

Supply Current (per

Package)

VIN =VCC

11

mA

VTSt Steering Threshold

Voltage

2.2

2.5

V

RIN Input Impedance (Signal @ 1 KHz

8

MΩ

Inputs 1,2)

VREF

ROR

Output Voltage

Output Resistance

No Load

2.4

2.8

V

10

kΩ

IOZ Maximum Three-State Output in High-

Leakage current

Impedance State

VIN =VIL

VOUT=VCC or GND

±0.1

µA

3

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