IRF640NSPBF(2010) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF640NSPBF Datasheet PDF : 11 Pages
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IRF640N/S/LPbF
2500
2000
1500
1000
500
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
20 ID = 11A
16
VDS= 160V
VDS= 100V
VDS= 40V
12
8
4
0
0
20
40
60
80
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
TJ = 175°C
10
1
TJ = 25°C
0.1
0.2
V GS= 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD ,Source-to-Drain Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 175 °C
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
4
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