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IRFIB7N50APBF Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRFIB7N50APBF
IR
International Rectifier IR
IRFIB7N50APBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SMPS MOSFET
PD - 94805
IRFIB7N50APbF
Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
High Voltage Isolation = 2.5KVRMS
Lead-Free
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective Coss specified ( See AN 1001)
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max ID
0.52
6.6A
G DS
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
6.6
4.2
44
60
0.48
± 30
6.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
Two Transistor Forward
Half & Full Bridge Convertors
Power Factor Correction Boost
Notes through are on page 8
Document Number: 91176
10/31/03
www.vishay.com
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