SIHFU9014 Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
Número de pieza
componentes Descripción
Lista de partido
SIHFU9014 Datasheet PDF : 7 Pages
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IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
RG
• dV/dt controlled by RG
+
• ISD controlled by duty factor "D"
• D.U.T. - device under test
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
Body diode forward
current
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple ≤ 5 %
ISD
* VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
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