IRHM7450SE Ver la hoja de datos (PDF) - International Rectifier
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IRHM7450SE Datasheet PDF : 4 Pages
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IRHM7450SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
∆BVDSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
500 — — V
— 0.6 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
— — 0.51
— — 0.57 Ω
VGS = 12V, ID = 7A
VGS = 12V, ID = 12A
2.5 — 4.5 V
3 — — S( )
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 7A
—
—
— 50
— 250
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
—
— 100 nA
— — -100
VGS = 20V
VGS = -20V
— — 140
— — 50 nC
VGS =12V, ID = 12A
VDS = Max. Rating x 0.5
— — 60
— — 35
—
—
— 50
— 100
ns
VDD = 250V, ID =12A,
RG = 2.35Ω
— — 60
— 8.7 —
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
—
8.7 —
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
— 4000 —
— 330 — pF
— 52 —
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
Min. Typ. Max. Units
Test Conditions
——
12
A Modified MOSFET symbol showing the
— — 48
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
— — 1.6 V
— — 500 ns
— — 16 µC
Tj = 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
— — 0.83
— — 48 K/W
— 0.21 —
To Order
Test Conditions
Typical socket mount
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