KM416C254D Ver la hoja de datos (PDF) - Samsung
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KM416C254D Datasheet PDF : 36 Pages
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KM416C254D, KM416V254D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
KM416V254D
Max
-5
-
ICC1
Don′t care
-6
70
-7
65
ICC2
Don′t care
Don′t care
1
-5
-
ICC3
Don′t care
-6
70
-7
65
-5
-
ICC4
Don′t care
-6
60
-7
55
ICC5
Normal
L
Don′t care
0.5
100
-5
-
ICC6
Don′t care
-6
70
-7
65
ICC7
L
Don′t care
200
ICCS
L
Don′t care
100
KM416C254D
110
90
80
2
110
90
80
90
80
70
1
150
110
90
80
300
200
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
mA
mA
mA
uA
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=0.2V,
DQ=Don′t care, TRC=125us, TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=UCAS=LCAS=VIL, W=OE=A0 ~ A8=VCC-0.2V or 0.2V,
DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3, ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In
ICC4, address can be changed maximum once within one Hyper page mode cycle time, tHPC.
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