M6MGB331S8AKT Ver la hoja de datos (PDF) - Renesas Electronics

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M6MGB331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY

Renesas Electronics 

Preliminary

Notice: This is not a final specification.

Some parametric limits are subject to change.

Renesas LSIs

M6MGB/T331S8AKT

33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS

FLASH MEMORY &

8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BIT) CMOS SRAM

Stacked - µ MCP (micro Multi Chip Package)

MCP Block Diagram

1) 2)

A0 to A20

F-CE#

F-WP#

F-RP#

BYTE#

WE#

OE#

S-UB#

S-LB#

S-CE1#

S-CE2

F-Vcc GND

1) 2)

A0 to A20

32Mbit DINOR(IV)

Flash Memory

1)

A0 to A18

S-Vcc

8Mbit

SRAM

1)

DQ0 to DQ15

Note 1): In case of x8 organization, A-1 is added, and only Lower Byte data(DQ0 to DQ7) are assigned to I/O and

Upper Byte data(DQ8 to DQ15) are High-Z.

Note 2): In the data sheet there are “VCC”s which mean “F-VCC” or "S-VCC". In the SRAM part there are “UB#” and

“LB#” which mean “S-UB#” and “S-LB#”, respectively.

Note 3): “DU(Don’t Use)” pin must be OPEN ,otherwise be inputted within 0V ~ Vcc.

Capacitance

Symbol

Parameter

Conditions

CIN

Input A20-A0, OE#, WE#, F-CE#, F-WP#, F-RP#,

capacitance S-CE1#, S-CE2, BYTE#, S-LB#, S-UB#

COUT

Output

Capacitance

DQ15-DQ0

Ta=25 °C,

f=1MHz,

Vin=Vout=0V

Limits

Unit

Min. Typ. Max.

18

pF

22

pF

2

Rev.0.2.48a_bebz

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