M48Z12-150PC1(2003) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Lista de partido
| M48Z12-150PC1 Datasheet PDF : 0 Pages | |||
M48Z02, M48Z12
Table 5. DC Characteristics
Symbol
Parameter
Test Condition(1)
Min
Max
Unit
ILI
ILO(2)
Input Leakage Current
Output Leakage Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
±1
µA
±1
µA
ICC
Supply Current
Outputs open
80
mA
ICC1 Supply Current (Standby) TTL
E = VIH
3
mA
ICC2 Supply Current (Standby) CMOS
E = VCC – 0.2V
3
mA
VIL(3)
VIH
VOL
Input Low Voltage
Input High Voltage
Output Low Voltage
IOL = 2.1mA
–0.3
0.8
V
2.2
VCC + 0.3
V
0.4
V
VOH Output High Voltage
IOH = –1mA
2.4
V
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C or –40 to 85°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. Outputs deselected.
3. Negative spikes of –1V allowed for up to 10ns once per Cycle.
OPERATION MODES
The M48Z02/12 also has its own Power-fail Detect
circuit. The control circuitry constantly monitors
the single 5V supply for an out of tolerance condi-
tion. When VCC is out of tolerance, the circuit write
protects the SRAM, providing a high degree of
Table 6. Operating Modes
Mode
VCC
E
G
Deselect
VIH
X
WRITE
READ
4.75 to 5.5V
or
4.5 to 5.5V
VIL
X
VIL
VIL
READ
VIL
VIH
Deselect VSO to VPFD(min)(1)
X
X
Deselect
≤ VSO(1)
X
X
Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
1. See Table 10, page 11 for details.
data security in the midst of unpredictable system
operation brought on by low VCC. As VCC falls be-
low approximately 3V, the control circuitry con-
nects the battery which maintains data operation
until valid power returns.
W
DQ0-DQ7
X
High Z
VIL
DIN
VIH
DOUT
VIH
High Z
X
High Z
Power
Standby
Active
Active
Active
CMOS Standby
X
High Z
Battery Back-up Mode
6/16
Share Link: 