M68AR024DN70ZB6T Ver la hoja de datos (PDF) - STMicroelectronics

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M68AR024DN70ZB6T

16 Mbit (1M x16) 1.8V Asynchronous SRAM

STMicroelectronics 

Figure 4. Block Diagram

E1

Ex

E2

UB

LB

W

G

M68AR024D

A19

A8

DQ15

UB

DQ0

LB

ROW

DECODER

MEMORY

ARRAY

(8)

I/O CIRCUITS

COLUMN

DECODER

(8)

(8)

UB

(8)

LB

A0

A7

AI05924

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings table may cause per-

manent damage to the device. These are stress

ratings only and operation of the device at these or

any other conditions above those indicated in the

Operating sections of this specification is not im-

Table 2. Absolute Maximum Ratings

Symbol

Parameter

IO (1)

Output Current

PD

Power Dissipation

TA

Ambient Operating Temperature

TSTG

Storage Temperature

VCC

Supply Voltage

VCCQ

I/O Supply Voltage

VIO (2)

Input or Output Voltage

Note: 1. One output at time not to exceed 1 second duration.

2. Up to a maximum operating VCC or VCCQ of 1.95V only.

plied. Exposure to Absolute Maximum Rating con-

ditions for periods greater than 1 sec may affect

device reliability. Refer also to the STMicroelec-

tronics SURE Program and other relevant quality

documents.

Value

20

1

–55 to 125

–65 to 150

–0.5 to 2.5

–0.5 to 2.5

–0.5 to VCCQ +0.5

Unit

mA

W

°C

°C

V

V

V

5/19

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