M68AR024DN70ZH6T Ver la hoja de datos (PDF) - STMicroelectronics

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M68AR024DN70ZH6T

16 Mbit (1M x16) 1.8V Asynchronous SRAM

STMicroelectronics 

M68AR024D

Table 4. Capacitance

Symbol

Parameter (1,2)

CIN

Input Capacitance on all pins (except DQ)

COUT (3) Output Capacitance

Note: 1. Sampled only, not 100% tested.

2. At TA = 25°C, f = 1MHz, VCC = 1.8V.

3. Outputs deselected.

Test

Condition

Min

Max Unit

VIN = 0V

6

pF

VOUT = 0V

8

pF

Table 5. DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ICC1 (1,2) Operating Supply Current

VCC = 1.95V,

f = 1/tAVAV,

IOUT = 0mA

5

25

mA

ICC2 (3) Operating Supply Current

VCC = 1.95V,

f = 1MHz,

IOUT = 0mA

3

mA

ILI

Input Leakage Current

0V ≤ VIN ≤ VCC

–1

1

µA

ILO (4) Output Leakage Current

0V ≤ VOUT ≤ VCC

–1

1

µA

VCC = 1.95V,

E1 ≥ VCCQ –0.2V OR

ISB Standby Supply Current CMOS

E2 ≤ 0.2V OR

UB, LB ≥ VCCQ –0.2V,

f=0

1

15

µA

VIH Input High Voltage

VCCQ – 0.4

VCCQ + 0.3

V

VIL Input Low Voltage

–0.3

0.4

V

VOH Output High Voltage

IOH = –100µA

VCCQ – 0.2

V

VOL Output Low Voltage

IOL = 100µA

Note: 1. Average AC current, cycling at tAVAV minimum.

2. E1 = VIL, E2 = VIH, UB OR/AND LB = VIL, VIN = VIH OR VIL.

3. E1 ≤ 0.2V or E2 ≥ VCCQ –0.2V, UB OR/AND LB ≤ 0.2V, VIN ≤ 0.2V or VIN ≥ VCCQ –0.2V.

4. Output disabled.

0.2

V

7/19

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