MC-458CB642XS-A75 Ver la hoja de datos (PDF) - Elpida Memory, Inc

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MC-458CB642XS-A75

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Elpida Memory, Inc 

MC-458CB642XS

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper

device operation is achieved.

Absolute Maximum Ratings

Parameter

Voltage on power supply pin relative to GND

Voltage on input pin relative to GND

EShort circuit output current

Power dissipation

Operating ambient temperature

Storage temperature

Symbol

VCC

VT

IO

PD

TA

Tstg

Condition

Rating

Unit

–0.5 to +4.6

V

–0.5 to +4.6

V

50

mA

4

W

0 to 70

°C

–55 to +125

°C

OL Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter

P Supply voltage

High level input voltage

Low level input voltage

Operating ambient temperature

Symbol

VCC

VIH

VIL

TA

Condition

MIN.

3.0

2.0

–0.3

0

TYP.

3.3

MAX. Unit

3.6

V

VCC + 0.3 V

+0.8

V

70

°C

ro Capacitance (TA = 25 °C, f = 1 MHz)

Parameter

Input capacitance

duct Data input/output capacitance

Symbol

Test condition

MIN.

CI1 A0 - A11, BA0 (A13), BA1 (A12), 15

/RAS, /CAS, /WE

CI2 CLK0

23

CI3 CKE0

15

CI4 /CS0

15

CI5 DQMB0 - DQMB7

5

CI/O DQ0 - DQ63

5

TYP.

MAX. Unit

30

pF

37

26

26

10

12

pF

Data Sheet E0115N20

5

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