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MC74LCX00

Low-Voltage CMOS Quad 2-Input NAND Gate

ON Semiconductor 

MC74LCX00

DC ELECTRICAL CHARACTERISTICS (continued)

Symbol

II

ICC

Characteristic

Input Leakage Current

Quiescent Supply Current

∆ICC

Increase in ICC per Input

Condition

2.7V ≤ VCC ≤ 3.6V; 0V ≤ VI ≤ 5.5V

2.7 ≤ VCC ≤ 3.6V; VI = GND or VCC

2.7 ≤ VCC ≤ 3.6V; 3.6 ≤ VI ≤ 5.5V

2.7 ≤ VCC ≤ 3.6V; VIH = VCC – 0.6V

TA = –40°C to +85°C

Min

Max

Unit

±5.0

µA

10

µA

±10

µA

500

µA

AC CHARACTERISTICS (tR = tF = 2.5ns; CL = 50pF; RL = 500Ω)

Limits

Symbol

Parameter

Waveform

TA = –40°C to +85°C

VCC = 3.0V to 3.6V

VCC = 2.7V

Min

Max

Max

Unit

tPLH

Propagation Delay

tPHL

Input to Output

1

1.5

5.2

6.0

ns

1.5

5.2

6.0

tOSHL

tOSLH

Output–to–Output Skew

(Note 3.)

1.0

ns

1.0

3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.

The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter

guaranteed by design.

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25°C

Min Typ Max Unit

VOLP

Dynamic LOW Peak Voltage (Note

VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V

0.8

V

4.)

VOLV

Dynamic LOW Valley Voltage (Note

VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V

0.8

V

4.)

4. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

Input Capacitance

VCC = 3.3V, VI = 0V or VCC

7

pF

COUT

Output Capacitance

VCC = 3.3V, VI = 0V or VCC

8

pF

CPD

Power Dissipation Capacitance

10MHz, VCC = 3.3V, VI = 0V or VCC

25

pF

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