MG100J6ES50 Ver la hoja de datos (PDF) - Toshiba
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MG100J6ES50 Datasheet PDF : 6 Pages
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TOSHIBA GTR Module Silicon N Channel IGBT
MG100J6ES50
High Power Switching Applications
Motor Control Applications
MG100J6ES50
Unit: mm
l The electrodes are isolated from case.
l High input impedance.
l 6 IGBTs built into 1 package.
l Enhancement-mode.
l High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A)
l Low saturation voltage
: VCE (sat) = 2.70V (Max) (IC = 100A)
Equivalent Circuit
JEDEC
EIAJ
TOSHIBA
Weight: 505g (Typ.)
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2-94A2A
000707EAA1
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2001-02-22 1/6
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