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CB35000

HCMOS STANDARD CELLS

STMicroelectronics 

CB35000 SERIES

Table 11 General Interface DC Electrical Characteristics (Note 1)

Symbol Parameter

Conditions

Iil

Low Level Input Current

Vi =Vss

Iih

High Level Input Current

Vi = Vdd

Ioz

Tri-State Output Leakage

Vo=0V or Vdd

Cin

Input Capacitance

Freq=1MHz

Co

Output Capacitance

Freq=1MHz

Cio

Bidi, I/O Capacitance

Freq=1MHz

Iklu

I/O Latch Up Current

V<Vss, V>Vdd

Vesd

Electrostatic Protection

HBM

Note 1.

Note 2.

Note 3.

Note 4.

Note 5.

These are extended voltage and temperature specifications

Vdd from 2.7 V to 3.6 V

Temperature Ambient from -55 to 125 degrees Centigrade

Adherence to rules in Power Pin / Pad Specifications Required

Excluding Package

At 0.0 Volts

Human Body Model

Min

Typ

Max

Unit

+/-10 uA

+/-10 uA

+/-10 uA

2.0

4.0

pF

4.0

pF

0.9

1.1

pF

200 500

mA

2000 4000

V

Notes

2

2

2

3,4

3,4

3,4

5

14/16

®

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