MSM51V18160A Ver la hoja de datos (PDF) - Oki Electric Industry

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MSM51V18160A

1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

Oki Electric Industry 

MSA-0700 Absolute Maximum Ratings

Parameter

Absolute Maximum[1]

Device Current

60 mA

Power Dissipation[2,3]

275 mW

RF Input Power

Junction Temperature

Storage Temperature

+13 dBm

200°C

–65 to 200°C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TMounting␣ Surface = 25°C.

3. Derate at 20 mW/°C for TMounting␣ Surface ␣ > 186 °C.

4. The small spot size of this technique results in a higher, though more

accurate determination of θjc than do alternate methods. See MEASURE-

MENTS section “Thermal Resistance” for more information.

Thermal Resistance[2,4]:

θjc = 50°C/W

Electrical Specifications[1], TA = 25°C

Symbol

Parameters and Test Conditions[2]: Id = 22 mA, ZO = 50 Ω

GP

Power Gain (|S21| 2)

∆GP

Gain Flatness

f = 0.1 GHz

f = 0.1 to 1.5 GHz

f3 dB

3 dB Bandwidth

VSWR

Input VSWR

Output VSWR

f = 0.1 to 2.5 GHz

f = 0.1 to 2.5 GHz

NF

50 Ω Noise Figure

f = 1.0 GHz

P1 dB Output Power at 1 dB Gain Compression

f = 1.0 GHz

IP3

Third Order Intercept Point

f = 1.0 GHz

tD

Group Delay

f = 1.0 GHz

Vd

Device Voltage

dV/dT Device Voltage Temperature Coefficient

Units Min.

dB

dB

GHz

dB

dBm

dBm

psec

V

3.6

mV/°C

Typ. Max.

13.5

± 0.6

2.5

2.0:1

1.6:1

4.5

5.5

19.0

130

4.0 4.4

–7.0

Notes:

1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current

is on the following page.

2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.

Part Number Ordering Information

Part Number

Devices Per Tray

MSA-0700-GP4

up to 100

6-387

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