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PI74ST1G126

SOTiny™ Gate ST Buffer with 3-State Output

Pericom Semiconductor Corporation 

PI74ST1G126

SOTiny™ Gate ST

Buffer with 3-State Output

AC Electrical Characteristics

Symbol Parameter VCC(V)

Conditions

TA = +25ºC

TA = -40º C to +85ºC Units

Min. Typ. Max. Min.

Max

Fig.

No.

tPLH Propagation

tPHL Delay

1.8

2.5±0.2

3.3±0.3

CL = 15pF,

RL = 1MΩ,

2.0 2.7 3.6

2.0

0.8 1.7 2.3

0.8

0.5 1.1 2.0

0.5

4.0

2.6

2.2

1

3

tPLH Propagation

tPHL Delay

3.3±0.3

CL = 50pF,

RL = 500Ω,

S1 = Open

1.5 2.7 3.6

1.5

4.0

1

3

CL = 50pF,

tPZL Output Enable

tPZH Time

1.8

2.5±0.2

3.3±0.3

RD = 500Ω,

RU = 500,

S1 = GND for tPZH

S1 = VIN for tPZL

2.0

1.5

1.5

5.9

4.0

3.0

7.8

5.4

4.1

2.0

1.5

1.5

VIN = 2 x VCC

8.6

6.0

4.5

ns

1

3

CL = 50pF,

tPLZ Output Disable

tPHZ Time

1.8

2.5±0.2

3.3±0.3

RD = 500Ω,

RU = 500,

S1 = GND for tPHZ

S1 = VIN for tPLZ

2.0

1.0

1.0

5.4

4.0

3.2

6.4

4.8

3.8

2.0

1.0

1.0

7.1

5.3

4.2

1

3

VIN = 2 x VCC

CIN

Input Capaci-

tance

VIN = 0

4

COUT

Output Capaci-

tance

VIN = 0

8

pF

CPD(1)

Power Dissipa-

tion Capacitance

3.3

17

2

Notes:

1. CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no

output loading and operating at 50% duty cycle (see Figure 2). CPD is related to ICCD dynamic operating current by the expression:

ICCD = (CPD)(VCC)(fIN) + (ICC static).

08-0291

3

PS8522G

11/10/08

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