R6020ANJ Ver la hoja de datos (PDF) - ROHM Semiconductor
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R6020ANJ Datasheet PDF : 6 Pages
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R6020ANJ
Data Sheet
10
1000
5
Ta= 25°C
VDD= 300V
ID= 20A
RG= 10
0
Pulsed
0 10 20 30 40 50 60
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
10
Ta = 25°C
Single Pulse : 1Unit
1 Rth（ch-a）（t）= ｒ（t）×Rth（ch-a）
Rth（ch-a）= 62.5°C/W
0.1
0.01
0.001
0.0001
0.0001 0.001
0.01
0.1
1
100
10
0.1
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
Fig.11 Reverse Recovery Time
vs.Reverse Drain Current
10
100
1000
PULSE WIDTH : Pw(s)
Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
10000
1000
100
td(off)
Ta= 25°C RG= 10Ω
tf VGS= 10V Pulsed
VDD= 300V
10
tr
td(on)
1
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.12 Switching Characteristics
zMeasurement circuits
VGS
RG
ID
VDS
RL
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
VGS
IG(Const.)
RG
ID
VDS
RL
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
Pulse width
50%
VGS
10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate charge waveform
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
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