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SPA20N60C2

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP20N60C2, SPB20N60C2

SPA20N60C2

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

Product Summary

VDS @ Tjmax 650 V

RDS(on)

0.19 Ω

ID

20 A

P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

3

12

P-TO220-3-31

Type

SPP20N60C2

SPB20N60C2

SPA20N60C2

Package

Ordering Code

P-TO220-3-1 Q67040-S4320

P-TO263-3-2 Q67040-S4322

P-TO220-3-31 Q67040-S4333

Marking

20N60C2

20N60C2

20N60C2

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=10A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=20A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Reverse diode dv/dt

IS = 20 A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

Page 1

Symbol

Value

SPP_B SPA

ID

20

201)

13

131)

ID puls

40

40

EAS

690

690

Unit

A

A

mJ

EAR

1

1

IAR

20

20 A

dv/dt

6

6 V/ns

VGS

VGS

Ptot

Tj , Tstg

±20

±20 V

±30

±30

208

34.5 W

-55...+150

°C

2002-08-12

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