ST110S04P1VPBF Ver la hoja de datos (PDF) - Vishay Semiconductors
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ST110S04P1VPBF Datasheet PDF : 10 Pages
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Phase Control Thyristors
(Stud Version), 110 A
ST110SPbF Series
Vishay Semiconductors
220
200
DC
180°
180
120°
160
90°
60°
140
30°
120
100 RMS Limit
80
60
40
20
Conduction Period
ST110S Series
TJ = 125°C
0.3 K/ W
0000...68.54KKKK////WWWW
1 K/ W
1.2 K/ W
0
0 20 40 60 80 100 120 140 160 12850
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
2400
2200
2000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1800
1600
1400
1200
ST110S Series
1000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
2800
Maximum Non Repetitive Surge Current
2600
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
2400
Initial TJ = 125°C
2200
No Voltage Reapplied
Rated VRRM Reapplied
2000
1800
1600
1400
1200 ST110S Series
1000
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
1000
100
Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5 1.5 2.5 3.5 4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Document Number: 94393 For technical questions within your region, please contact one of the following:
Revision: 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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