ST110S04P1VLPBF Ver la hoja de datos (PDF) - Vishay Semiconductors

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ST110S04P1VLPBF

Phase Control Thyristors (Stud Version), 110 A

Vishay Semiconductors 

ST110SPbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 110 A

1

Steady State Value

R thJC = 0.195 K/W

(DC Operation)

0.1

0.01

ST110S Series

0.001

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristic

100

Rectangular gate pulse

a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10 tr<=1 µs

(a)

(b)

(1) PGM = 10W, tp = 4ms

(2) PGM = 20W, tp = 2ms

(3) PGM = 40W, tp = 1ms

(4) PGM = 60W, tp = 0.66ms

1

0.1

0.001

VGD

IGD

0.01

(1) (2) (3) (4)

Device: ST110S Series Frequency Limited by PG(AV)

0.1

1

10

100

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

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6

For technical questions within your region, please contact one of the following: Document Number: 94393

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 17-Aug-10

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