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ST180S Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
ST180S
IR
International Rectifier IR
ST180S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ST18P0rSevSioeursieDs atasheet
Index
Next Data Sheet
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
04
08
12
ST180S
16
18
400
800
1200
1600
1800
20
2000
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1700
1900
2100
IDRM/IRRM max.
@ TJ = TJ max
mA
30
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Max. (typical) latching current
ST180S
200
85
314
5000
5230
4200
4400
125
114
88
81
1250
1.08
1.14
Units Conditions
A 180° conduction, half sine wave
°C
12
A DC @ 76°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
1.18
1.14
1.75
600
1000 (300)
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)),TJ = TJ max.
2222222222222
V
Ipk= 570A, TJ = 125°C, tp = 10ms sine pulse
mA TJ = TJ max, anode supply 12V resistive load
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
ST180S
1000
td
Typical delay time
1.0
tq
Typical turn-off time
100
To Order
Units Conditions
A/µs
µs
Gate drive 20V, 20, tr 1µs
TJ = TJ max, anode voltage 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs

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