STW12NK60Z Ver la hoja de datos (PDF) - STMicroelectronics

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STW12NK60Z

N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP12NK60Z, STF12NK60Z, STW12NK60Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220, TO-247 TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t =1 s;TC = 25 °C)

Tstg Storage temperature

Tj

Max operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD = 480 V

600

±30

10

6.3

40

150

1.2

4.5

10 (1)

6.3 (1)

40 (1)

35

0.27

2500

2500

-55 to 150

150

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

Value

Unit

TO-220 TO-247 TO-220FP

0.83

62.5

50

3.6

°C/W

62.5 °C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, ID=IAS, VDD=50 V)

Doc ID 11324 Rev 7

Value

10

260

Unit

A

mJ

3/15

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