UNR2154 Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Lista de partido
UNR2154 Datasheet PDF : 3 Pages
| |||
Transistors with built-in Resistor
UNR2154 (UN2154)
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q High forward current transfer ratio hFE.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–30
V
Collector to emitter voltage VCEO
–30
V
Collector current
IC
–100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Marking Symbol: EV
Internal Connection
R1(10kΩ)
C
B
R2
(47kΩ)
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –30V, IE = 0
VCE = –30V, IB = 0
VEB = –3V, IC = 0
VCE = –10V, IC = –5mA
IC = –50mA, IB = – 0.33mA
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
min
–30
–30
80
–4.9
–30%
typ max
– 0.1
– 0.5
– 0.1
– 0.5 –1.2
10
0.213
80
– 0.2
+30%
Unit
V
V
µA
µA
mA
—
V
V
V
kΩ
—
MHz
Note) The part number in the parenthesis shows conventional part number.
1
Share Link: 