UPD4564323 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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UPD4564323

64M-bit Synchronous DRAM 4-bank, LVTTL

NEC => Renesas Technology 

µPD4564323 for Rev. E

Self refresh entry command

Fig.7 Self refresh entry command

(/CS, /RAS, /CAS, CKE = Low, /WE = High)

After the command execution, self refresh operation continues while CKE

remains low. When CKE goes high, the µPD4564323 exits the self refresh

mode.

During self refresh mode, refresh interval and refresh operation are

performed internally, so there is no need for external control.

Before executing self refresh, all banks must be precharged.

CLK

CKE

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

A10

Add

Burst stop command

(/CS, /WE = Low, /RAS, /CAS = High)

This command can stop the current burst operation.

Fig.8 Burst stop command in Full

Page Mode

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

A10

Add

No operation

(/CS = Low, /RAS, /CAS, /WE = High)

This command is not an execution command. No operations begin or

terminate by this command.

Fig.9 No operation

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

A10

Add

Data Sheet M14376EJ2V0DS00

11

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