VN50300L Ver la hoja de datos (PDF) - Vishay Semiconductors
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VN50300L Datasheet PDF : 4 Pages
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VN50300L/VN50300T
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 5 V
12
VGS = 0 V
10
f = 1 MHz
Capacitance
1
TJ = 150_C
8
125_C
0.1
25_C
–55_C
0.01
0
1
2
3
4
5
6
7
VGS – Gate-to-Source Voltage (V)
Gate Charge
30
ID = 10 mA
25
6
C iss
4
C oss
2
C rss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Load Condition Effects on Switching
100
tf
20
15
10
5
0
0
VDS = 250 V
400 V
25
50
100
150
200
Qg – Total Gate Charge (pC)
td(off)
10
tr
td(on)
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
1
1
10
100
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.1
0.01
Single Pulse
1
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Document Number: 70216
S-04279—Rev. D, 16-Jul-01
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